Text preview for : ceu04n6_ced04n6.pdf part of CET ceu04n6 ced04n6 . Electronic Components Datasheets Active components Transistors CET ceu04n6_ced04n6.pdf
Back to : ceu04n6_ced04n6.pdf | Home
CED04N6/CEU04N6
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
600V, 3.4A, RDS(ON) = 2.4 @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant. D
TO-251 & TO-252 package.
D G
G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK) S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS