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BUV27
SILICON NPN SWITCHING TRANSISTOR
n VERY LOW SATURATION VOLTAGE
n FAST TURN-OFF AND TURN-ON
DESCRIPTION
High speed transistor suited for low voltage
applications.
High frequency and efficiency converters
switching regulators motor control.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
V CBO Collector-base Voltage (I E = 0) 240 V
V CEO Collector-Emitter Voltage (I B = 0) 120 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 12 A
I CM Collector Peak Current 20 A
IB Base Current 4 A
I BM Base Peak Current 6 A
P tot T otal Dissipation at T c < 25 oC 85 W
o
P tot T otal Dissipation at T c < 60 C 65 W
o
T s tg Storage Temperature -65 to +175 C
o
Tj Max. O perating Junction Temperature 175 C
October 1995 1/4
BUV27
THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 1.76 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
o
I CER Collector Cut-off V CE = 240V T c = 125 C 3 mA
Current (R BE = 50)
o
I CEX Collector Cut-off V CE = 240V VBE = -1.5V Tc = 125 C 1 mA
Current
I EBO Emitter Cut- off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 0.2mA L = 25mH 120 V
Sustaining Voltage
V EBO Emitter-Base Voltage I E = 50mA 7 30 V
(I C = 0)
V CE(sat) Collector-Emitter I C = 4A IB = 0.4A 0.7 V
Saturation Voltage I C = 8A IB = 0.8A 1.5 V
V BE(sat ) Base-Emitter I C = 8A IB = 0.8A 2 V
Saturation Voltage
RESISTIVE L OAD
t on Turn-on Time V CC = 90V IC = 8A 0.4 0.8 ms
ts Storage Time V BE = - 6V I B1 = 0.8A 0.5 1.2