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2SC4215
SOT-323 Transistor(NPN)

1. BASE SOT-323
2. EMITTER
3. COLLECTOR

Features
Small reverse transfer capacitance: Cre= 0.55pF(typ.)
Low noise figure: NF=2dB (typ.) (f=100 MHz)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
40 V Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 20 mA
PC Collector Power Dissipation 100 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 4 V
Collector cut-off current ICBO VCB=40V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V,IC=0 0.5 A
DC current gain hFE VCE=6V,IC=1mA 40 200
Collector-base time constant Cc.rbb VCE=6V,IC=1mA, f=30MHZ 25 ps
Transition frequency fT VCE=6V,IC=1mA, 260 550 MHz
Reverse transfer capacitance Cre VCB=10V,f=1MHz 0.55 pF

Noise figure NF 2 5 dB
VCC=6V,Ic=1mA,f=100MHZ
Power gain Gpe 17 23 dB

CLASSIFICATION OF hFE
Rank R O Y
Range 40-80 70-140 100-200
Marking QR QO QY
2SC4215
SOT-323 Transistor(NPN)

Typical Characteristics
2SC4215
SOT-323 Transistor(NPN)