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LND150
N-Channel Depletion-Mode
DMOS FET
Features General Description
Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode
Low power drive requirement (normally-on) transistor utilizing Supertex's lateral DMOS
Ease of paralleling technology. The gate is ESD protected.
Excellent thermal stability
Integral source-drain diode The LND150 is ideal for high voltage applications in the
High input impedance and low CISS areas of normally-on switches, precision constant current
ESD gate protection sources, voltage ramp generation and amplification.

Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits

Ordering Information
Package Options RDS(ON) IDSS
BVDSX/BVDGX
Device (max) (min)
TO-236AB (SOT-23) TO-92 TO-243AA (SOT-89) (V)
(K) (mA)
LND150 LND150K1-G LND150N3-G LND150N8-G 500 1.0 1.0
-G indicates package is RoHS compliant (`Green')

Pin Configurations

DRAIN

Absolute Maximum Ratings SOURCE

Parameter Value
GATE
Drain-to-source BVDSX
TO-92 (N3)
Drain-to-gate BVDGX
Gate-to-source