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STB35NF10
STP35NF10
N-channel 100V - 0.030 - 40A - D2PAK/TO-220
Low gate charge STripFETTM II Power MOSFET
General features
Type VDSS RDS(on) ID
STB35NF10 100V <0.035 40A
STP35NF10 100V <0.035 40A
3
Exceptional dv/dt capability 3
1
2
100% avalanche tested 1
D2PAK
Application oriented characterization TO-220
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore Internal schematic diagram
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
Switching application
Order codes
Part number Marking Package Packaging
2PAK
STB35NF10T4 B35NF10 D Tape & reel
STP35NF10 P35NF10 TO-220 Tube
June 2006 Rev 4 1/14
www.st.com 14
Contents STB35NF10 - STP35NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STB35NF10 - STP35NF10 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VDGR Drain-gate voltage (RGS = 20 k) 100 V
VGS Gate- source voltage