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DISCRETE SEMICONDUCTORS

DATA SHEET

BSP120
N-channel enhancement mode
vertical D-MOS transistor
Product specification April 1995
File under Discrete Semiconductors, SC13b
Philips Semiconductors Product specification

N-channel enhancement mode vertical
BSP120
D-MOS transistor

DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode Drain-source voltage VDS max. 200 V
vertical D-MOS transistor in a Drain-current (DC) ID max. 250 mA
miniature SOT223 envelope and
Drain-source ON-resistance
designed for use as a line current typ. 7
interrupter in telephone sets and for ID = 250 mA; VGS = 10 V RDS(on)
max. 12
application in relay, high-speed and
line-transformer drivers. Gate threshold voltage VGS(th) max. 2.8 V

FEATURES PINNING - SOT223