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2N4403
General Purpose Transistors
PNP Silicon COLLECTOR
3
TO-92
2
BASE
1
1. EMITTER 2
1 3
2. BASE
EMITTER
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol 2N4403 Unit
Collector-Emitter Voltage VCEO -40 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current IC -600 mAdc
Total Device Dissipation TA=25 C PD 625 mW
Junction Temperature Tj 150 C
Storage Temperature Tstg -55 to +150 C
DEVICE MARKING
2N4403=2N4403
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (1) (IC= -1.0 mAdc, IB=0) V(BR)CEO -40 - Vdc
Collector-Base Breakdown Voltage (IC= -0.1 mAdc, IE=0) V(BR)CBO -40 - Vdc
Emitter-Base Breakdown Voltage (IE= -0.1 mAdc, IC=0) V(BR)EBO -5.0 - Vdc
Base Cutoff Current (VCB= -35 Vdc, IE=0) ICBO - -0.1 uAdc
Collect Cutoff Current(VCE = -35 Vdc, I B =0) I CEO - -0.1 uAdc
1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
WEITRON
http://www.weitron.com.tw
2N4403
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain -
hFE -
(IC= -0.1 mAdc, VCE=-1.0 Vdc) 30
(IC= -1.0 mAdc, VCE=-1.0 Vdc) 60 -
(IC= -10 mAdc, VCE=-1.0 Vdc) 100 -
(IC= -150 mAdc, VCE=-2.0 Vdc) (1) 100 300
(IC= -500 mAdc, VCE=-2.0 Vdc) (1) 20 -
Collector-Emitter Saturation Voltage (1) VCE(sat) Vdc
(IC= -150 mAdc, IB= -15 mAdc) - -0.4
(IC=- 500 mAdc, IB= -50 mAdc) - -0.75
Base-Emitter Saturation Voltage (1) VBE(sat) Vdc
(IC= -150 mAdc, IB= -15 mAdc) -0.75 -0.95
(IC= -500 mAdc, IB=- 50 mAdc) - -1.3
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product MHz
fT 200 -
(IC= -20 mAdc, VCE=-10 Vdc, f=100 MHz)
Collector-Base Capacitance Ccb - 8.5 pF
(IE= 0, VCB=-10 Vdc, f=1.0MHz)
Emitter-Base Capacitance
Ceb - 30 pF
(IC= 0, VEB=-0.5 Vdc, f=1.0MHz)
Input Impedance hie 1.5k 15k ohms
(IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz)
Voltage Feedback Ratio hre I I 10 -4
0.1 8.0
(IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz)
Small-Signal Current Gain hfe 60 500 -
(IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz)
Output Admittance
hoe 1.0 100 umhos
(IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz)
SWITCHING CHARACTERISTICS
Delay Time (VCC= -30 Vdc, VBE= +2.0 Adc, td - 15
Rise Time IC= -150 mAdc,IB1=-15mAdc) tr - 20
ns
Storage Time (VCC= -30 Vdc, IC= -150 mAdc, ts - 225
IB1= -15 mAdc,I B2=-15mAdc)
Fall Time tf - 30
1. Pulse Test : Pulse Width < 300