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SEMICONDUCTOR KHB5D0N50P/F/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB5D0N50P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 500V, ID= 5.0A
Drain-Source ON Resistance :
RDS(ON)=1.5 @VGS = 10V
Qg(typ.) = 21nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC SYMBOL KHB5D0N50F UNIT
KHB5D0N50P
KHB5D0N50F2
KHB5D0N50F
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
@TC=25 5.0 5.0*
ID
Drain Current @TC=100 2.9 2.9* A
Pulsed (Note1) IDP 20 20*
Single Pulsed Avalanche Energy EAS 390 mJ
(Note 2)
Repetitive Avalanche Energy EAR 9.2 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 3.5 V/ns
(Note 3)
Drain Power Tc=25 73 38 W
PD
Dissipation Derate above 25 0.74 0.3 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
KHB5D0N50F2
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 1.71 3.31 /W
Thermal Resistance, Case-to-Sink RthCS 0.5 - /W
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2007. 5. 10 Revision No : 0 1/7
KHB5D0N50P/F/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.24 1.5
Dynamic
Total Gate Charge Qg - 21 25
VDS=400V, ID=5A
Gate-Source Charge Qgs - 3.6 4.4 nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 8.3 13
Turn-on Delay time td(on) - - 40
VDD=250V
Turn-on Rise time tr - - 50
RL=50 ns
Turn-off Delay time td(off) - - 200
RG=25 (Note4,5)
Turn-off Fall time tf - - 75
Input Capacitance Ciss - 820 1100
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 90 115 pF
Reverse Transfer Capacitance Crss - 12.7 21
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS Pulsed Source Current ISP - - 20
Diode Forward Voltage VSD IS=5A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=5A, VGS=0V, - 330 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 2.93 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=21.5mH, IS=5A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 5A, dI/dt 100A/ s, VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 s, Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
2007. 5. 10 Revision No : 0 2/7
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2007. 5. 10 Revision No : 0 6/7
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