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SEMICONDUCTOR BC807W
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES E
M B M
Complementary to BC817W.
DIM MILLIMETERS
A _
2.00 + 0.20
D
2 B _
1.25 + 0.15
A
_
J
C 0.90 + 0.10
1 3
G
D 0.3+0.10/-0.05
E _
2.10 + 0.20
MAXIMUM RATING (Ta=25 ) G 0.65
H 0.15+0.1/-0.06
CHARACTERISTIC SYMBOL RATING UNIT J 1.30
K 0.00~0.10
Collector-Base Voltage VCBO -50 V L 0.70
C
H
L
M 0.42
Collector-Emitter Voltage VCEO -45 V N 0.10 MIN
N N
K
Emitter-Base Voltage VEBO -5 V
Collector Current IC -500 mA 1. EMITTER
Emitter Current IE 500 mA 2. BASE
3. COLLECTOR
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150