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DISCRETE SEMICONDUCTORS

DATA SHEET

BFT92
PNP 5 GHz wideband transistor
Product specification November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

PNP 5 GHz wideband transistor BFT92

DESCRIPTION PINNING
PNP transistor in a plastic SOT23 PIN DESCRIPTION
envelope.
Code: W1p
It is primarily intended for use in RF 1 base fpage 3
wideband amplifiers, such as in aerial
2 emitter
amplifiers, radar systems,
oscilloscopes, spectrum analyzers, 3 collector
etc. The transistor features low
intermodulation distortion and high 1 2
power gain; due to its very high Top view MSB003
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
Fig.1 SOT23.
NPN complements are BFR92 and
BFR92A.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter - -20 V
VCEO collector-emitter voltage open base - -15 V
IC DC collector current - -25 mA
Ptot total power dissipation up to Ts = 95