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SEMICONDUCTOR KTC4376
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES A
C
1W (Mounted on Ceramic Substrate).
H
Small Flat Package. G
Complementary to KTA1664.
B
J
E
DIM MILLIMETERS
A 4.70 MAX
D D B _
2.50 + 0.20
K C 1.70 MAX
MAXIMUM RATING (Ta=25 ) F F
D 0.45+0.15/-0.10
E 4.25 MAX
F _
1.50 + 0.10
CHARACTERISTIC SYMBOL RATING UNIT
G 0.40 TYP
H 1.75 MAX
Collector-Base Voltage VCBO 35 V 1 2 3
J 0.75 MIN
K 0.5+0.10/-0.05
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V 1. BASE
2. COLLECTOR (HEAT SINK)
Collector Current IC 800 mA
3. EMITTER
Base Current IB 160 mA
PC 500 mW
Collector Power Dissipation
PC* 1 W SOT-89
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
PC* : KTC4376 mounted on ceramic substrate (250mm2x0.8t)
Marking
h FE Rank Lot No.
Type Name
P
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V
hFE(1) (Note) VCE=1V, IC=100mA 100 - 320
DC Current Gain
hFE(2) VCE=1V, IC=700mA 35 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=20mA - - 0.5 V
Base-Emitter Voltage VBE VCE=1V, IC=10mA 0.5 - 0.8 V
Transition Frequency fT VCE=5V, IC=10mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 13 - pF
Note : hFE Classification O:100 200, Y:160 320
1998. 6. 15 Revision No : 2 1/2
KTC4376
1998. 6. 15 Revision No : 2 2/2