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SEMICONDUCTOR KTA733B
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity.
A
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
Low Noise : NF=1dB(Typ.). at f=1kHz N DIM MILLIMETERS
E A 4.70 MAX
K
Complementary to KTC945B. G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
MAXIMUM RATING (Ta=25 ) H J _
14.00 + 0.50
F F K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT L 2.30
M 0.45 MAX
Collector-Base Voltage VCBO -60 V N 1.00
C
1 2 3
L
M
Collector-Emitter Voltage VCEO -50 V 1. EMITTER
2. BASE
Emitter-Base Voltage VEBO -5 V 3. COLLECTOR
Collector Current IC -150 mA
Collector Power Dissipation PC 625 mW
TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A, IE=0 -60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-100 A, IC=0 -5 - - V
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-6V, IC=-2mA 70 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V
Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-10mA - - -1.1 V
Transition Frequency fT VCE=-10V, IC=-10mA - 300 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF
Noise Figure NF VCE=-6V, IC=-0.1mA Rg=10k , f=1kHz - 1.0 10 dB
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
2001. 9. 14 Revision No : 2 1/2
KTA733B
2001. 9. 14 Revision No : 2 2/2