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Philips Semiconductors Product specification

PowerMOS transistor BUK555-60H
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in
a plastic envelope. VDS Drain-source voltage 60 V
The device is intended for use in ID Drain current (DC) 41 A
Automotive applications, Switched Ptot Total power dissipation 125 W
Mode Power Supplies (SMPS), Tj Junction temperature 175