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BLL1214-250R
LDMOS L-band radar power transistor
Rev. 01 -- 4 February 2010 Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead
flange package (SOT502A) with a ceramic cap. The common source is connected to the
flange.
Table 1. Test information
Typical RF performance at Th = 25