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TIP140/141/142
TIP145/146/147
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s TIP141, TIP142, TIP145 AND TIP147 ARE
SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS 3
2
s LINEAR AND SWITCHING INDUSTRIAL 1
EQUIPMENT
DESCRIPTION TO-218
The TIP140, TIP141 and TIP142 are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration and are
mounted in TO-218 plastic package. They are
intented for use in power linear and switching
applications. INTERNAL SCHEMATIC DIAGRAM
The complementary PNP types are TIP145,
TIP146 and TIP147 respectively.
R1 Typ. = 5 K R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP140 TIP141 TIP142
PNP TIP145 TIP146 TIP147
V CBO Collector-Base Voltage (I E = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 10 A
I CM Collector Peak Current 20 A
IB Base Current 0.5 A
P tot Total Dissipation at T case 25 C o
125 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
For PNP types voltage and current values are negative.
June 1997 1/4
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off for TIP140/145 V CB = 60 V 1 mA
Current (I E = 0) for TIP141/146 V CB = 80 V 1 mA
for TIP142/147 V CB = 100 V 1 mA
I CEO Collector Cut-off for TIP140/145 V CE = 30 V 2 mA
Current (I B = 0) for TIP141/146 V CE = 40 V 2 mA
for TIP142/147 V CE = 50 V 2 mA
I EBO Emitter Cut-off Current V EBO = 5 V 2 mA
(I C = 0)
VCEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for TIP140/145 60 V
(I B = 0) for TIP141/146 80 V
for TIP142/147 100 V
V CE(sat) * Collector-Emitter IC = 5 A I B = 10 mA 2 V
Saturation Voltage I C = 10 A I B = 40 mA 3 V
V BE(on) * Base-Emitter Voltage I C = 10 A V CE = 4 V 3 V
h FE * DC Current Gain IC = 5 A V CE = 4 V 1000
I C = 10 A V CE = 4 V 500
t on Turn-on Time I C = 10 A I B1 = 40 mA 0.9