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MMBT4401WT1G
Switching Transistor
NPN Silicon
Features
Moisture Sensitivity Level: 1 http://onsemi.com
ESD Rating: Human Body Model; 4 kV,
Machine Model; 400 V
COLLECTOR
These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS 3
Compliant
1
BASE
MAXIMUM RATINGS 2
EMITTER
Rating Symbol Value Unit
Collector - Emitter Voltage
- VCEO 40 Vdc
Collector - Base Voltage
- VCBO 60 Vdc
3
Emitter - Base Voltage
- VEBO 6.0 Vdc
Collector Current - Continuous
- IC 600 mAdc 1
2
THERMAL CHARACTERISTICS
SC- 70 (SOT- 323)
- -
Characteristic Symbol Max Unit
CASE 419
Total Device Dissipation FR- Board
-5 PD 150 mW STYLE 3
TA = 25C
Thermal Resistance, RJA 833 C/W
MARKING DIAGRAM
Junction- -Ambient
-to-
Junction and Storage Temperature TJ, Tstg - 55 to +150
- C
Stresses exceeding Maximum Ratings may damage the device. Maximum 2X MG
Ratings are stress ratings only. Functional operation above the Recommended G
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. 1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device Package Shipping
MMBT4401WT1G SC--70 3000/Tape & Reel
(Pb-
-Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 2 MMBT4401WT1/D
MMBT4401WT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0)
- V(BR)CEO 40 -
- Vdc
-
Collector - Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 -
- Vdc
-
Emitter - Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 -
- Vdc
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV -
- 0.1 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain hFE -
-
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 20 -
-
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 40 -
-
(IC = 10 mAdc, VCE = 1.0 Vdc) 80 -
-
(IC = 150 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 500 mAdc, VCE = 2.0 Vdc) 40 -
-
Collector - Emitter Saturation Voltage
- VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) -
- 0.4
(IC = 500 mAdc, IB = 50 mAdc) -
- 0.75
Base - Emitter Saturation Voltage
- VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.75 0.95
(IC = 500 mAdc, IB = 50 mAdc) -
- 1.2
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX -
- 0.1 mAdc
SMALL- SIGNAL CHARACTERISTICS
-
Current - Gain - Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
- - fT 250 -
- MHz
Collector-
-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb -
- 6.5 pF
Emitter-
-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb -
- 30 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 k
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10-- 4
-
Small - Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 -
-
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VEB = 2.0 Vdc, td -
- 15
ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr -
- 20
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts -
- 225
ns
Fall Time IB1 = IB2 = 15 mAdc) tf -
- 30
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V + 30 V
1.0 to 100 ms, 1.0 to 100 ms, 200
200 +16 V
+16 V DUTY CYCLE 2.0% DUTY CYCLE 2.0%
0 0
1.0 k - 14 V 1.0 k CS* < 10 pF
- 2.0 V CS* < 10 pF
< 2.0 ns < 20 ns
Scope rise time < 4.0 ns - 4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn-
-On Time Figure 2. Turn-
-Off Time
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2
MMBT4401WT1G
TRANSIENT CHARACTERISTICS
25C 100C
30 10
7.0
VCC = 30 V
20 5.0
IC/IB = 10
Cobo 3.0
QT
CAPACITANCE (pF)
2.0
Q, CHARGE (nC)
10
1.0
7.0
0.7
5.0 0.5
Ccb 0.3
3.0 0.2 QA
2.0 0.1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 300 500
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitances Figure 4. Charge Data
100 100
70 IC/IB = 10 70 VCC = 30 V
tr IC/IB = 10
50 50
tr @ VCC = 30 V
30 tr @ VCC = 10 V 30 tf
t, TIME (ns)
t, TIME (ns)
td @ VEB = 2.0 V
20 td @ VEB = 0 20
10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-
-On Time Figure 6. Rise and Fall Times
300 100
ts = ts - 1/8 tf VCC = 30 V
70
IB1 = IB2 IB1 = IB2
200
IC/IB = 10 to 20 50 IC/IB = 20
t s, STORAGE TIME (ns)
t f , FALL TIME (ns)
30
100
20 IC/IB = 10
70
50 10
7.0
30 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time
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MMBT4401WT1G
SMALL-
-SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25C; Bandwidth = 1.0 Hz
10 10
IC = 1.0 mA, RS = 150 f = 1.0 kHz
IC = 500 mA, RS = 200 RS = OPTIMUM
8.0 8.0
IC = 100 mA, RS = 2.0 k RS = SOURCE IC = 50 mA
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
IC = 50 mA, RS = 4.0 k RS = RESISTANCE IC = 100 mA
6.0 6.0 IC = 500 mA
IC = 1.0 mA
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects Figure 10. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain
these curves, a high- gain and a low- gain unit were selected from the MMBT4401WT1 lines, and the same units were used
- -
to develop the correspondingly numbered curves on each graph.
300 50 k
MMBT4401LT1 UNIT 1
200 MMBT4401LT1 UNIT 2
hie , INPUT IMPEDANCE (OHMS)
20 k
hfe, CURRENT GAIN
10 k
100
MMBT4401LT1 UNIT 1 5.0 k
70
MMBT4401LT1 UNIT 2
50
2.0 k
30 1.0 k
20 500
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain Figure 12. Input Impedance
10 100
h re , VOLTAGE FEEDBACK RATIO (X 10- 4 )
7.0
hoe , OUTPUT ADMITTANCE (m mhos)
5.0 50
MMBT4401LT1 UNIT 1
3.0 MMBT4401LT1 UNIT 2
20
2.0
10
1.0 MMBT4401LT1 UNIT 1
0.7 5.0 MMBT4401LT1 UNIT 2
0.5
2.0
0.3
0.2 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance
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MMBT4401WT1G
STATIC CHARACTERISTICS
3.0
VCE = 1.0 V
2.0 VCE = 10 V
h FE , NORMALIZED CURRENT GAIN
TJ = 125C
1.0
25C
0.7
0.5 - 55C
0.3
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
VCE, COLLECTOR-- EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25C
0.8
0.6
IC = 1.0 mA 10 mA 100 mA 500 mA
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0 + 0.5
TJ = 25C
VBE(sat) @ IC/IB = 10 0
0.8 VC for VCE(sat)
COEFFICIENT (mV/ C)
VOLTAGE (VOLTS)
- 0.5
0.6 VBE @ VCE = 10 V
- 1.0
0.4
- 1.5
0.2 VCE(sat) @ IC/IB = 10 - 2.0 VB for VBE
0 - 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 17. "On" Voltages Figure 18. Temperature Coefficients
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MMBT4401WT1G
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
c STYLE 3:
A A2 PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb-
-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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