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STGB7NB40LZ
N-CHANNEL CLAMPED 14A - D2PAK
INTERNALLY CLAMPED PowerMESHTM IGBT

TYPE VCES VCE(sat) IC

STGB7NB40LZ CLAMPED < 1.50 V 14 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP 3
1
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE D2PAK



t( s)
uc
DESCRIPTION

Using the latest high voltage technology based on a
d
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESHTM IGBTs, with outstanding
ro
INTERNAL SCHEMATIC DIAGRAM

P
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
le te
so
gate-emitter zener supplies an ESD protection.



APPLICATIONS
- Ob
(s)
s AUTOMOTIVE IGNITION




ct
du
ABSOLUTE MAXIMUM RATINGS
Symbol
o Parameter Value Unit
VCES
VECR
e Pr
Collector-Emitter Voltage (VGS = 0)
Reverse Battery Protection
CLAMPED
20
V
V


let
VGE Gate-Emitter Voltage CLAMPED V
IC
o Collector Current (continuous) at 100