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DISCRETE SEMICONDUCTORS

DATA SHEET

BS170
N-channel vertical D-MOS
transistor
Product specification April 1995
File under Discrete Semiconductors, SC13b
Philips Semiconductors Product specification

N-channel vertical D-MOS transistor BS170

DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode Drain-source voltage VDS max. 60 V
vertical D-MOS transistor in TO-92 Gate-source voltage VGS max. 15 V
variant envelope and intended for use
Drain current (DC) ID max. 500 mA
in relay, high-speed and
line-transformer drivers. Total power dissipation up to Tamb = 25