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SEMICONDUCTOR KTD1530
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER
DARLINGTON TRANSISTOR.
A
N Q B
O K
FEATURES
DIM MILLIMETERS
Complementary to KTB2530. _
F
A 15.60 + 0.20
B _
4.80 + 0.20
Recommended for 80W Audio Amplifier Output Stage. C _
19.90 + 0.20
C
J
R
_
I
D 2.00 + 0.20
H
d _
1.00 + 0.20
E _
3.00 + 0.20
F _
3.80 + 0.20
G
G _
3.50 + 0.20
D H _
13.90 + 0.20
MAXIMUM RATING (Ta=25 ) E I _
12.76 + 0.20
J _
23.40 + 0.20
CHARACTERISTIC SYMBOL RATING UNIT
L
d M K 1.5+0.15-0.05
L _
16.50 + 0.30
Collector-Base Voltage VCBO 160 V M _
1.40 + 0.20
P P N _
13.60 + 0.20
VCEO T
Collector-Emitter Voltage 150 V O _
9.60 + 0.20
P _
5.45 + 0.30
Emitter-Base Voltage VEBO 5 V Q _
3.20 + 0.10
1 2 3 _
R 18.70 + 0.20
Collector Current IC 10 A T 0.60+0.15-0.05
Base Current IB 1 A
Collector PowerDissipation (Tc=25 ) PC 100 W
Junction Temperature Tj 150 TO-3P(N)-E
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
COLLECTOR
BASE
70
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=160V, IE=0 - - 100 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=30mA, IB=0 150 - - V
DC Current Gain hFE VCE=4V, IC=7A 15,000 - 30,000
Collector-Emitter Saturation Voltage VCE(sat) IC=7A, IB=7mA - - 2.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=7A, IB=7mA - - 3.0 V
Transition Frequency fT VCE=12V, IC=2A - 50 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 230 - pF
2012. 8. 21 Revision No : 0 1/3
KTD1530
2012. 8. 21 Revision No : 0 2/3
KTD1530
2012. 8. 21 Revision No : 0 3/3