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STP5NB40
STP5NB40FP
N-CHANNEL 400V - 1.47 - 4.7A TO-220/TO-220FP
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID
STP5NB40 400 V < 1.8 4.7 A
STP5NB40FP 400 V < 1.8 4.7 A
s TYPICAL RDS(on) = 1.47
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES 3 3
2 2
s GATE CHARGE MINIMIZED 1 1
s)
TO-220 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
t(
uc
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
d
ro
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
P
te
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
le
APPLICATIONS
so
Ob
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
-
(s)
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
ct
Symbol
o du Parameter Value Unit
Pr
STP5NB40 STP5NB40FP
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR
e
Drain-gate Voltage (RGS = 20 k) 400 V
VGS
ID
o let
Gate- source Voltage
Drain Current (continuos) at TC = 25