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Philips Semiconductors Product specification

PowerMOS transistor BUK553-48C
Voltage clamped logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT
mode logic level field-effect power
transistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 V
The device is intended for use in ID Drain current (DC) 21 A
automotive applications. It has Ptot Total power dissipation 75 W
built-in zener diodes providing active Tj Junction temperature 175