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STB11NB40
N - CHANNEL ENHANCEMENT MODE
PowerMESHTM MOSFET
TYPE V DSS R DS(on) ID
STB11NB40 400 V < 0.55 10.7 A
s TYPICAL RDS(on) = 0.48
s EXTREMELY HIGH dV/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED

DESCRIPTION 3 3
Using the latest high voltage MESH OVERLAYTM 12 1
process, SGS-Thomson has designed an
advanced family of power MOSFETs with I2PAK D2PAK
outstanding performances. The new patent TO-262 TO-263
pending strip layout coupled with the Company's (suffix "-1") (suffix "T4")
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 400 V
V DGR Drain- gate Voltage (R GS = 20 k) 400 V
V GS Gate-source Voltage