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SEMICONDUCTOR KHB7D0N65P1/F1/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KHB7D0N65P1
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
_
avalanche characteristics. It is mainly suitable for active power factor B
A 9.9 + 0.2
B 15.95 MAX
correction and switching mode power supplies. Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
K P F _
2.8 + 0.1
FEATURES M G 3.7
L
H 0.5+0.1/-0.05
VDSS=650V, ID=7A J I 1.5
D J _
13.08 + 0.3
Drain-Source ON Resistance : N N H K 1.46
L _
1.4 + 0.1
RDS(ON)=1.4 @VGS=10V M _
1.27 + 0.1
N _
2.54 + 0.2
Qg(typ.)= 32nC _ 0.2
O 4.5 +
1 2 3 P _
2.4 + 0.2
1. GATE
2. DRAIN Q _
9.2 + 0.2
MAXIMUM RATING (Tc=25 ) 3. SOURCE
RATING
TO-220AB
CHARACTERISTIC SYMBOL KHB7D0N65F1 UNIT
KHB7D0N65P1
KHB7D0N65F2
KHB7D0N65F1
VDSS A C
Drain-Source Voltage 650 V
F
Gate-Source Voltage VGSS 30 V
O
E DIM MILLIMETERS
@TC=25 7 7*
B
A _
10.16 + 0.2
G
ID B _
15.87 + 0.2
Drain Current @TC=100 4.2 4.2* A C _
2.54 + 0.2
D _
0.8 + 0.1
E _
3.18 + 0.1
Pulsed (Note1) IDP 28 28* _
K
F 3.3 + 0.1
G _ 0.2
12.57 +
Single Pulsed Avalanche Energy EAS L M _
212 mJ R H 0.5 + 0.1
(Note 2) J J 13.0 MAX
K _
3.23 + 0.1
Repetitive Avalanche Energy EAR
D
1.6 mJ L 1.47 MAX
(Note 1) N N
M 1.47 MAX
H
N _
2.54 + 0.2
Peak Diode Recovery dv/dt O _
6.68 + 0.2
dv/dt 4.5 V/ns
(Note 3) Q _
4.7 + 0.2
R _
2.76 + 0.2
1 2 3
Q
Drain Power Tc=25 160 52 W
1. GATE
PD 2. DRAIN
Dissipation Derate above 25 1.28 0.42 W/ 3. SOURCE
Maximum Junction Temperature Tj 150 TO-220IS (1)
Storage Temperature Range Tstg -55 150
KHB7D0N65F2
Thermal Characteristics
A C
Thermal Resistance, Junction-to-Case RthJC 0.78 2.4 /W
S
F
P
Thermal Resistance, Case-to-Sink RthCS 0.5 - /W E DIM MILLIMETERS
A _
10.0 + 0.3
B
Thermal Resistance, B _
15.0 + 0.3
G
RthJA 62.5 62.5 /W C _
2.70 + 0.3
Junction-to-Ambient D 0.76+0.09/-0.05
E _
3.2 +0.2
* : Drain current limited by maximum junction temperature. L L
R F _
3.0 + 0.3
K
G _
12.0 + 0.3
PIN CONNECTION M H 0.5+0.1/-0.05
J
D D J _
13.6 + 0.5
D K _
3.7 + 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N N H N _
2.54 +0.1
P _
6.8 + 0.1
Q _
4.5 + 0.2
R _
2.6 + 0.2
1 2 3 S 0.5 Typ
G
Q
1. GATE
2. DRAIN
3. SOURCE
S TO-220IS
2010. 10. 27 Revision No : 1 1/7
KHB7D0N65P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 650 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.8 - V/
Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.75A - 1.2 1.4
Dynamic
Total Gate Charge Qg - 32 40
VDS=520V, ID=7.0A
Gate-Source Charge Qgs - 5.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 12.6 -
Turn-on Delay time td(on) - 20 45
VDD=325V
Turn-on Rise time tr - 40 90
RL=46 ns
Turn-off Delay time td(off) - 125 260
RG=25 (Note4,5)
Turn-off Fall time tf - 80 170
Input Capacitance Ciss - 1310 1700
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 113 147 pF
Reverse Transfer Capacitance Crss - 11.4 14.8
Source-Drain Diode Ratings
Continuous Source Current IS - - 7
VGS Pulsed Source Current ISP - - 28
Diode Forward Voltage VSD IS=7.0A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=7.0A, VGS=0V, - 410 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 4 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =8mH, IS=7.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 7.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
2010. 10. 27 Revision No : 1 2/7
KHB7D0N65P1/F1/F2
2010. 10. 27 Revision No : 1 3/7
KHB7D0N65P1/F1/F2
2010. 10. 27 Revision No : 1 4/7
KHB7D0N65P1/F1/F2
2010. 10. 27 Revision No : 1 5/7
KHB7D0N65P1/F1/F2
2010. 10. 27 Revision No : 1 6/7
KHB7D0N65P1/F1/F2
2010. 10. 27 Revision No : 1 7/7