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STS05DTP03
Dual NPN-PNP complementary bipolar transistor
Features
High gain
Low VCE(sat) 5
8
Simplified circuit design
Reduced component count
4
1
Applications
Push-pull or Totem-Pole configuration SO-8
MOSFET and IGBT gate driving
Motor, relay and solenoid driving
Figure 1. Internal schematic diagram
Description
The STS05DTP03 is a hybrid dual NPN-PNP
complementary power bipolar transistor
manufactured by using the latest low voltage
planar technology. The STS05DTP03 is housed in
dual island SO-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to be used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.
Table 1. Device summary
Order code Marking Package Packaging
STS05DTP03 S05DTP03 SO-8 Tape and reel
March 2009 Rev 1 1/10
www.st.com 10
Electrical ratings STS05DTP03
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
NPN PNP
VCBO Collector-base voltage (IE = 0) 45 -45 V
VCEO Collector-emitter voltage (IB = 0) 30 -30 V
VEBO Emitter-base voltage (IC = 0) 6 -6 V
IC Collector current 5 -5 A
ICM Collector peak current (tP < 5 ms) 10 -10 A
IB Base current 1 -1 A
IBM Base peak current (tP < 1 ms) 2 -2 A
PTOT Total dissipation at Tamb = 25