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DISCRETE SEMICONDUCTORS
DATA SHEET
BFT25
NPN 2 GHz wideband transistor
Product specification November 1992
NXP Semiconductors Product specification
NPN 2 GHz wideband transistor BFT25
DESCRIPTION PINNING
NPN transistor in a plastic SOT23 PIN DESCRIPTION
envelope.
Code: V1p
It is primarily intended for use in RF 1 base lfpage 3
low power amplifiers, such as in
2 emitter
pocket phones, paging systems, etc.
The transistor features low current 3 collector
consumption (100 A to 1 mA); due to
its high transition frequency, it also 1 2
has excellent wideband properties
Top view MSB003
and low noise up to high frequencies.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter 8 V
VCEO collector-emitter voltage open base 5 V
Ic DC collector current 6.5 mA
Ptot total power dissipation up to Ts = 167 C; note 1 30 mW
fT transition frequency IC = 1 mA; VCE = 1 V; f = 500 MHz; 2.3 GHz
Tamb = 25 C
Cre feedback capacitance IC = 1 mA; VCE = 1 V; f = 1 MHz; 0.45 pF
Tamb = 25 C
GUM maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; 18 dB
Tamb = 25 C
F noise figure IC = 1 mA; VCE = 1 V; f = 500 MHz; 3.8 dB
Tamb = 25 C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 8 V
VCEO collector-emitter voltage open base 5 V
VEBO emitter-base voltage open collector 2 V
IC DC collector current 6.5 mA
ICM peak collector current f 1 MHz 10 mA
Ptot total power dissipation up to Ts = 167 C; note 1 30 mW
Tstg storage temperature 65 150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992 2
NXP Semiconductors Product specification
NPN 2 GHz wideband transistor BFT25
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to up to Ts = 167C; note 1 260 K/W
soldering point
Note
1. Ts = is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 5 V 50 nA
hFE DC current gain IC = 10 A; VCE = 1 V 20 30
IC = 1 mA; VCE = 1 V 20 40
fT transition frequency IC = 1 mA; VCE = 1 V; f = 500 MHz 1.2 2.3 GHz
Cc collector capacitance IE = ie = 0; VCB = 0.5 V; f = 1 MHz 0.6 pF
Ce emitter capacitance Ic = ic = 0; VEB = 0; f = 1 MHz 0.5 pF
Cre feedback capacitance IC = 1 mA; VCE = 1 V; f = 1 MHz; 0.45 pF
Tamb = 25 C
GUM maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; 18 dB
(note 1) Tamb = 25 C
IC = 1 mA; VCE = 1 V; f = 800 MHz; 12 dB
Tamb = 25 C
F noise figure IC = 0.1 mA; VCE = 1 V; 5.5 dB
f = 500 MHz; Tamb = 25 C
IC = 1 mA; VCE = 1 V; f = 500 MHz; 3.8 dB
Tamb = 25 C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log --------------------------------------------------------- dB.
2 2
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