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BC327/328(PNP)
TO-92 Bipolar Transistors

1. COLLECTOR TO-92
2. BASE

3. EMITTER

Features
Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage BC327 -50
V
BC328 -30
VCEO Collector-Emitter Voltage BC327 -45
V
BC328 -25
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -800 mA
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 625 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage IC= -100uA, IE=0
BC327 VCBO -50 V
BC328 -30
Collector-emitter breakdown voltage IC= -10mA , IB=0
BC327 VCEO -45 V
BC328 -25
Emitter-base breakdown voltage VEBO IE= -10uA, IC=0 -5 V
Collector cut-off current
BC327 ICBO VCB= -45 V , IE=0 -0.1 uA
BC328 VCB= -25V , IE=0 -0.1
Collector cut-off current
BC327 ICEO VCE= -40 V , IB=0 -0.2 uA
BC328 VCE= -20 V , IB=0 -0.2
Emitter cut-off current IEBO VEB= -4 V , IC=0 -0.1 uA
hFE(1) VCE=-1 V, IC= -100mA 100 630
DC current gain
hFE(2) VCE=-1 V, IC= -300mA 40
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V
Base-emitter saturation voltage VBE(sat) IC= -500mA, IB=-50mA -1.2 V
Base-emitter voltage VBE VCE=-1 V, IC= -300mA -1.2 V
VCE= -5V, IC= -10mA
Transition frequency fT 260 MHz
f = 100MHz
VCB=-10V,IE=0
Collector Output Capacitance Cob 12 pF
f=1MHZ
CLASSIFICATION OF hFE
Rank 16 25 40
Range 100-250 160-400 250-630
BC327/328(PNP)
TO-92 Bipolar Transistors

Typical Characteristics
BC327/328(PNP)
TO-92 Bipolar Transistors