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Philips Semiconductors Product Specification

PowerMOS transistor BUK545-200A/B
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
logic level field-effect power
transistor in a plastic full-pack BUK545 -200A -200B
envelope. VDS Drain-source voltage 200 200 V
The device is intended for use in ID Drain current (DC) 7.6 7 A
Switched Mode Power Supplies Ptot Total power dissipation 30 30 W
(SMPS), motor control, welding, Tj Junction temperature 150 150