Text preview for : kf2n60d-i.pdf part of KEC kf2n60d-i . Electronic Components Datasheets Active components Transistors KEC kf2n60d-i.pdf
Back to : kf2n60d-i.pdf | Home
SEMICONDUCTOR KF2N60D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF2N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for switching mode C D L
A _
6.60 + 0.20
power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
E _
2.70 + 0.15
FEATURES B
F _
2.30 + 0.10
G 0.96 MAX
VDSS= 600V, ID= 2.0A
H 0.90 MAX
H
RDS(ON)=4.4 (Max) @VGS = 10V J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Qg(typ) = 6.0nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
O 0.1 MAX
MAXIMUM RATING (Tc=25 ) 1 2 3 1. GATE
2. DRAIN
CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE
O
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
@TC=25 2.0
ID DPAK (1)
Drain Current @TC=100 1.2 A
Pulsed (Note1) IDP 4.0
Single Pulsed Avalanche Energy EAS KF2N60I
60 mJ
(Note 2)
A H
Repetitive Avalanche Energy EAR 2.3 mJ C J
(Note 1)
D
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
B
DIM MILLIMETERS
Drain Power Tc=25 40.3 W A _
6.6 + 0.2
PD B _
6.1 + 0.2
Dissipation Derate above 25 0.32 W/ M
K
C _
5.34 + 0.3
P
D _
0.7 + 0.2
Maximum Junction Temperature Tj 150 N
E _
9.3 +0.3
E
Tstg F _
2.3 + 0.2
Storage Temperature Range -55 150
G _
0.76 + 0.1
G
Thermal Characteristics H _
2.3 + 0.1
L J _
0.5+ 0.1
F F
Thermal Resistance, Junction-to-Case RthJC 3.1 /W K _
1.8 + 0.2
L _
0.5 + 0.1
Thermal Resistance, Junction-to- _
RthJA 110 /W M 1.0 + 0.1
Ambient 1 2 3 N 0.96 MAX
1. GATE P _
1.02 + 0.3
2. DRAIN
3. SOURCE
PIN CONNECTION
(KF2N60D/I)
IPAK(1)
D
G
S
2011. 9. 21 Revision No : 1 1/6
KF2N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1A - 3.7 4.4
Dynamic
Total Gate Charge Qg - 6.0 -
VDS=480V, ID=2A
Gate-Source Charge Qgs - 1.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.8 -
Turn-on Delay time td(on) - 10 -
VDD=300V
Turn-on Rise time tr - 20 -
ID=2A ns
Turn-off Delay time td(off) - 25 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 270 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 35 - pF
Reverse Transfer Capacitance Crss - 3.9 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 2
VGS Pulsed Source Current ISP - - 8
Diode Forward Voltage VSD IS=2A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=2A, VGS=0V, - 290 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ - 0.9 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=28mH, IS=2A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 2A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1 1
KF2N60 KF2N60
D 001 2 I 001 2
1 PRODUCT NAME
2 LOT NO
2011. 9. 21 Revision No : 1 2/6
KF2N60D/I
Fig1. ID - VDS Fig2. ID - VGS
1
10
1 10
VGS=10V
Drain Current ID (A)
Drain Current ID (A)
VGS=7V
0
10 TC=100 C
VGS=5V
0
10
25 C
-1
10
-2 -1
10 10
0.1 1 10 100 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 12.0
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250
10.0
1.1
8.0
VGS=6V
1.0 6.0 VGS=10V
4.0
0.9
2.0
0.8 0
-100 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 3.0
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - Tj
10
2 3.0
VGS =10V
Reverse Drain Current IS (A)
IDS = 1A
2.5
Normalized On Resistance
10
1 2.0
TC=100 C 1.5
25 C
10
0 1.0
0.5
-1 0.0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150
Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)
2011. 9. 21 Revision No : 1 3/6
KF2N60D/I
Fig 7. C - VDS Fig8. Qg- VGS
1000 12
ID=2A
Gate - Source Voltage VGS (V)
10
Ciss
Capacitance (pF)
100 8
6
Coss VDS = 480V
10 4
Crss 2
1 0
0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area Fig10. ID - Tj
101 Operation in this 3.5
area is limited by RDS(ON)
10