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DISCRETE SEMICONDUCTORS

DATA SHEET

BUJ103A
Silicon Diffused Power Transistor
Product specification August 1998
Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ103A

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) 2 - 4 A
ICM Collector current peak value - 8 A
Ptot Total power dissipation Tmb 25