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AM2729-110
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.
. REFRACTORY/GOLD METALLIZATION
.
.
EMITTER SITE BALLASTED
3:1 VSWR CAPABILITY
.
.
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
.
.
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P OUT = 105 W MIN. WITH 6.5 dB GAIN
.400 x .500 2L SFL (S138)
hermetically sealed
ORDER CODE BRANDING
AM2729-110 2729-110
DESCRIPTION
PIN CONNECTION
The AM2729-110 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metalliza-
tion, and computerized automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM2729-110 is supplied in the BIGPACTM Her-
metic M etal/Ceramic package with i nternal
Input/Output matching circuitry, and is intended 1. Collector 3. Emitter
for military and other high reliability applications. 2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25