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TECHNICAL DATA

NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/423

Devices Qualified Level
JAN
2N5581 2N5582 JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector-Emitter Voltage VCEO 50 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 800 mAdc
Total Power Dissipation @ TA = 250C (1) 0.5 W
PT
@ TC = 250C (2) 2.0 W TO-46*
0
Operating & Storage Junction Temperature Range Top, Tstg -55 to +200 C (TO-206AB)
1) Derate linearly 2.86 mW/0C for TA > 250C
2) Derate linearly 11.43 mW/0C for TC > 250C
*See appendix A for
package outline

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO 50 Vdc
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 60 Vdc ICBO 10 Adc
VCB = 75 Vdc 10