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PBLS6021D
60 V, 1.5 A PNP BISS loadswitch
Rev. 01 -- 12 August 2009 Product data sheet

1. Product profile

1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.

1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low threshold voltage (<1 V) compared to MOSFET
I Space-saving solution
I Reduction of component count
I AEC-Q101 qualified

1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low VCEsat transistor
VCEO collector-emitter voltage open base - - -60 V
IC collector current - - -1.5 A
ICM peak collector current single pulse; - - -3 A
tp 1 ms
RCEsat collector-emitter saturation IC = -1.5 A; [1] - 110 175 m
resistance IB = -100 mA
TR2; NPN resistor-equipped transistor
VCEO collector-emitter voltage open base - - 50 V
IO output current - - 100 mA
R1 bias resistor 1 (input) 1.54 2.2 2.86 k
R2/R1 bias resistor ratio 0.8 1 1.2

[1] Pulse test: tp 300