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TIP141/142
TIP146/147
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
n SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The TIP141and TIP142 are silicon epitaxial-base
NPN power transistors in monolithic Darlington
configuration and are mounted in TO-218 plastic
package. They are intented for use in power
linear and switching applications.
The complementary PNP types are TIP146 and 3
2
TIP147 respectively. 1
TO-218
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 K R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
NPN T IP141 T IP142
PNP T IP146 T IP147
V CBO Collector-Base Voltage (I E = 0) 80 100 V
V CEO Collector-Emitter Voltage (IB = 0) 80 100 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 10 A
I CM Collector Peak Current 20 A
IB Base Current 0.5 A
o
P tot T otal Dissipation at Tc ase 25 C 125 W
o
T s tg Storage T emperature -65 to 150 C
o
Tj Max. Operating Junction T emperature 150 C
* For PNP types voltage and current values are negative.
October 1995 1/4
TIP141/TIP142/TIP146/TIP147
THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 1 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CBO Collector Cut-off for T IP141/146 V CB = 80 V 1 mA
Current (I E = 0) for TIP142/147 V CB = 100 V 1 mA
I CEO Collector Cut-off for T IP141/146 V CE = 40 V 2 mA
Current (I B = 0) for T IP142/147 V CE = 50 V 2 mA
I EBO Emitter Cut- off Current V EBO = 5 V 2 mA
(I C = 0)
V CEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for T IP141/146 80 V
(I B = 0) for TIP142/147 100 V
V CE(sat )* Collector-Emitter IC = 5 A I B = 10 mA 2 V
Saturation Voltage I C = 10 A I B = 40 mA 3 V
V BE(on) * Base-Emitter Voltage I C =10 A V CE = 4 V 3 V
h FE* DC Current Gain IC = 5 A V CE = 4 V 1000
I C = 10 A V CE = 4 V 500
t on Turn-on Time IC = 10 A I B1 = 40 mA 0.9