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MMBTA55
MMBTA56
Driver PNP 3
1
2
SOT-23
MMBTA55 MMBTA56
V CEO -60 -80
-60 -80
-4.0 -4.0
-5
MMBTA55=2H, MMBTA56=2GM
(3) -
MMBTA55 -60
MMBTA56 -80
- 0
MMBTA55 -60
MMBTA56 -80
- 0 -4.0
I B =0) S -0.1 u
-6 MMBTA55 -0.1
u
-8 MMBTA56 -0.1
3.Pulse Test:Pulse Width < 300us, Duty Cycle < 2.0%
_ _
4. f T is defined as the freguency at which hfeextrapolates to unity
WEITRON
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MMBTA55
MMBTA56
ELECTRICAL CHARACTERISTICS (T A = 25 C unles s otherwis e noted)
C harac teris tic S ymbol Min Max Unit
ON CHARACTERISTICS
DC C urrent G ain
(I C = -10 mAdc, VC E = -1.0 V dc) hF E -100 - -
(I C = -100 mAdc, VC E = -1.0 V dc) -100 - -
C ollector- E mitter S aturation Voltage V C E (s at) - -0.25 V dc
(I C = -100 mAdc, IB = -10 mAdc)
B as e- E mitter On Voltage V B E (on) - -1.2 V dc
(I C = -100 mAdc, VC E = -1.0 V dc)
SMALL- SIGNAL CHARACTERISTICS
C urrent- G ain - B andwidth P roduct (4)
fT 50 - MHz
(I C = -100 mA, VC E = -1.0 V f = 100 MHz)
,
TURN-ON TIME TURN-OFF TIME
-1.0 V VCC +VBB VCC
+40 V +40 V
5.0 u s 100 RL 100 RL
+10 V OUTPUT OUTPUT
Vin RB Vin RB
0 - -
tr = 3.0 n s
5.0 uF
* CS - 6.0 pF
5.0 uF * CS - 6.0 pF
100 100
5.0 us
tr = 3.0 ns
*Total S hunt C apacitance of Tes t J ig and C onnectors
F or P NP Tes t C ircuits , R evers e All Voltage P olarities
FIG1. Switching Time Test Circuits
f T , CURRENT-GAIN - BANDWIDTH PRODUCT(MHz)
300
VCE = -2.0 V
200 TJ = 25 C
100
70
50
30
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200
IC , COLLECTOR CURRENT (mA)
FIG2. Current-Gain - Bandwidth Product
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MMBTA55
MMBTA56
100
1.0 k
TJ = 25 C
70 700
500
50 Cibo ts
300
C, CAPACITANCE (pF)
30 200
t, TIME (ns)
20 100
70 tf
50
10 Cobo VCC = 40 V
30 IC/IB = 10 tr
7.0 20 IB1 = IB2
TJ = 25 C td @ V BE(off) = 0.5 V
5.0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 10
-5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
VR , REVERSE VOL TAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
FIG.3 Capacitance
FIG4. Switching Time
400 -1.0
TJ = 25 C
TJ = 125 C
VCE = -1.0 V -0.8 VBE(sat) @ I C/IB = 10
200
hFE , DC CURRENT GAIN
V, VOLTAGE (VOLTS)
25 C
-0.6
VBE(on) @ V CE = -1.0 V
-55 C
100 -0.4
80
60 -0.2
VCE(sat) @ I C/IB = 10
40 0
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC , COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA)
FIG.5 DC Current Gain FIG6. "ON"Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0 -0.8
R VB , TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25 C
-0.8 -1.2
IC = IC = IC = IC =
-50 mA -100 mA -250 mA -500 mA
-0.6 -1.6
-0.4 -2.0 R VB for VBE
IC =
-0.2 -10 mA -2.4
0 -2.8
-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IB , BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
FIG7. Collector Saturation Region FIG8. Base-Emitter Temperature
Coefficient
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MMBTA55
MMBTA56
SOT-23 Package Outline Dimensions Unit:mm
A Dim Min Max
A 0.35 0.51
B 1.19 1.80
T OP V IE W B C C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
D
G 1.70 2.10
G
E H 2.70 3.10
H J 0.01 0.13
K 0.89 1.60
K L 0.30 0.61
M 0.076 0.25
L
J M
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