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Data Sheet
4V Drive Pch MOSFET
RSJ250P10
Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET LPTS
10.1 4.5
1.3
Features
9.0
13.1
1) Low on-resistance. 1.24
1.0
2) Built-in G-S Protection Diode.
3.0
2.54 0.4
1.2
0.78
5.08 2.7
(1) (2) (3)
Application
Switching
Packaging specifications Inner circuit
Package Taping 1
Type Code TL
Basic ordering unit (pieces) 1000
2
RSJ250P10
(1) Gate
Absolute maximum ratings (Ta = 25C) (2) Drain (1) (2) (3)
Parameter Symbol Limits Unit (3) Source 1 ESD PROTECTION DIODE
2 BODY DIODE
Drain-source voltage VDSS 100 V
Gate-source voltage VGSS 20 V
Continuous ID *1 25 A
Drain current
Pulsed IDP *2 50 A
Source current Continuous IS *1 25 A
(Body Diode) Pulsed ISP *2 50 A
Power dissipation PD *3 50 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Limited only by maximum temperature allowed.
*2 PW10s, Duty cycle1%
*3 TC=25