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Philips Semiconductors Product specification

TrenchMOSTM transistor PHT8N06LT
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 55 V
mounting. The device features very ID Drain current 7.5 A
low on-state resistance and has Ptot Total power dissipation 1.8 W
integral zener diodes giving ESD Tj Junction temperature 150