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SEMICONDUCTOR KMB7D0NP30QA
TECHNICAL DATA N and P-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for Back-light Inverter.
H
T
D P G L
FEATURES
N-Channel
: VDSS=30V, ID=7A. A
DIM MILLIMETERS
: RDS(ON)=23.5m (Max.) @ VGS=10V A _
4.85 + 0.2
B1 _
3.94 + 0.2
: RDS(ON)=39m (Max.) @ VGS=4.5V B2 _
8 5 6.02 + 0.3
P-Channel D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
: VDSS=-30V, ID=-5A. H _
1.63 + 0.2
: RDS(ON)=45.5m (Max.) @ VGS=-10V 1 4 L _
0.65 + 0.2
P 1.27
: RDS(ON)=80m (Max.) @ VGS=-4.5V
T 0.20+0.1/-0.05
Super High Dense Cell Design.
Reliable and rugged.
FLP-8
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage VDSS 30 -30 V
Gate-Source Voltage VGSS 20 20 V
DC I D* 7 -5
Drain Current A
Pulsed (note1)
IDP 29 -20
Source-Drain Diode Current IS 1.7 -1.7 A
Drain Power Dissipation PD* 2 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
Note : *Sorface Mounted on FR4 Board
PIN CONNECTION (TOP VIEW)
D1 D1 S2
S1 1 8 D1
G1 2 7 D1
S2 3 6 D2 G2
G1
G2 4 5 D2
S1 D2 D2
N-Channel MOSFET P-Channel MOSFET
2007. 6. 28 Revision No : 2 1/9
KMB7D0NP30QA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
ID=250 A, VGS=0V, N-Ch 30 - -
Drain-Source Breakdown Voltage BVDSS V
ID=-250 A, VGS=0V, P-Ch -30 - -
VGS=0V, VDS=24V N-Ch - - 1
Drain Cut-off Current IDSS A
VGS=0V, VDS=-24V P-Ch - - -1
N-Ch - - 100
Gate Leakage Current IGSS VGS= 22V, VDS=0V nA
P-Ch - - 100
VDS=VGS, ID=250 A N-Ch 1.0 - 3
Gate Threshold Voltage Vth V
VDS=VGS, ID=-250 A P-Ch -1.0 - -3
VGS=10V, ID=7A N-Ch - 18 23.5
VGS=-10V, ID=-5A P-Ch - 35 45.5
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=6A N-Ch - 30 39
VGS=-4.5V, ID=-4A P-Ch - 62 80
VGS=4.5V, VDS=5V N-Ch 20 - -
ON State Drain Current ID(ON)* A
VGS=-10V, VDS=-5V P-Ch -20 - -
VDS=5V, ID=6.6A N-Ch - 10 -
Forward Transconductance gfs* S
VDS=-5V, ID=-5A P-Ch - 9 -
Source-Drain Diode Forward IS=1.7A, VGS=0V N-Ch - 0.7 1.2
VSD* V
Voltage IS=-1.7A, VGS=0V P-Ch - -0.8 -1.2
2007. 6. 28 Revision No : 2 2/9
KMB7D0NP30QA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Dynamic
N-Ch
: VDS=15V, ID=6.6A, N-Ch - 16.4 20.5
VGS=10V (Fig.1)
P-Ch
: VDS=-15V, ID=-5A, P-Ch - 13 16
VGS=-10V (Fig.3)
Total Gate Charge Qg
N-Ch
: VDS=15V, ID=6.6A, N-Ch - 7.2 9
VGS=4.5V (Fig.1)
nC
P-Ch
: VDS=-15V, ID=-5A, P-Ch - 6.25 7.8
VGS=-4.5V (Fig.3)
N-Ch N-Ch - 4 -
Gate-Source Charge Qgs : VDS=15V, ID=6.6A,
VGS=10V (Fig.1) P-Ch - 2.6 -
P-Ch N-Ch - 2.6 -
Gate-Drain Charge Qgd : VDS=-15V, ID=-5A,
VGS=-10V (Fig.3) P-Ch - 2.9 -
N-Ch - 7.4 -
Turn-on Delay time td(on)
P-Ch - 4.7 -
N-Ch N-Ch - 27.7 -
Turn-on Rise time tr : VDD=15V, ID=6.6A,
VGS=10V, RG=3 (Fig.2) P-Ch - 7.8 -
P-Ch ns
N-Ch - 12.2 -
Turn-off Delay time td(off) : VDD=-15V, VGS=-10V,
RG=3 , RL=2.7 (Fig.4) P-Ch - 47.2 -
N-Ch - 7.6 -
Turn-off Fall time tf
P-Ch - 22.6 -
N-Ch - 742 -
Input Capacitance Ciss
P-Ch - 820 -
N-Ch
: VDS=15V, VGS=0V, f=1.0MHz N-Ch - 126 -
Output Capacitance Coss pF
P-Ch P-Ch - 137 -
: VDS=-15V, VGS=0V, f=1.0MHz
N-Ch - 76 -
Reverse transfer Capacitance Crss
P-Ch - 89 -
Note 1>* Pulse test : Pulse width 300 , Duty Cycle 2%.
2007. 6. 28 Revision No : 2 3/9
KMB7D0NP30QA
N-Channel Fig1. ID - VDS Fig2. ID - VGS
20 25
VGS= 4V
Drain Current ID (A)
16 20
Drain Current ID (A)
VGS = 10, 9, 8, 7, 6, 5V
12 15
8 10
VGS= 3V
Tj = -55 C Tj = 125 C
4 5
Tj = 25 C
0 0
0 1 2 3 4 5 6 0 0.8 1.6 2.4 3.2 4.0 4.8
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. Vth - Tj Fig4. IDR - VSD
Normalized Threshold Voltage Vth (V)
1.6 20.0
VDS = VGS
Reverse Drain Current IDR (A)
IDS = 250