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2SC5345

TRANSISTOR (NPN)
FEATURES SOT-23
RF amplifier
High current transition frequency fT=550MHz(Typ.), 1. BASE
[VCE=6V, IE=-1mA] 2. EMITTER
Low output capacitance : 3. COLLECTOR
Cob=1.4pF(Typ.) [VCB=6V, IE=0]
Low base time constant and high gain
Excellent noise response

Marking: 5345

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current 20 mA
PC Collector Power dissipation 300 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC=5mA, IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 4 V
Collector cut-off current ICBO VCB=30V, IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A
DC current gain hFE VCE=6V, IC=1mA 40 240
Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.3 V
Transition frequency fT VCE=6V, IC=1mA 550 MHz
Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 1.4 pF

CLASSIFICATION OF hFE
Rank R O Y

Range 40-80 70-140 120-240

1

JinYu www.htsemi.com
semiconductor
2SC5345

2

JinYu www.htsemi.com
semiconductor