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DISCRETE SEMICONDUCTORS

DATA SHEET

BFG135
NPN 7GHz wideband transistor
Product specification 1995 Sep 13
File under discrete semiconductors, SC14
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

DESCRIPTION PINNING
NPN silicon planar epitaxial transistor PIN DESCRIPTION
in a plastic SOT223 envelope, age 4
1 emitter
intended for wideband amplifier
applications. The small emitter 2 base
structures, with integrated 3 emitter
emitter-ballasting resistors, ensure 4 collector
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile. 1 2 3
Top view MSB002 - 1

Fig.1 SOT223.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter - - 25 V
VCEO collector-emitter voltage open base - - 15 V
IC DC collector current - - 150 mA
Ptot total power dissipation up to Ts = 145