Text preview for : krc857e_859e.pdf part of KEC krc857e 859e . Electronic Components Datasheets Active components Transistors KEC krc857e_859e.pdf
Back to : krc857e_859e.pdf | Home
SEMICONDUCTOR KRC857E~KRC859E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B
B1
FEATURES
With Built-in Bias Resistors. 1 6 DIM MILLIMETERS
C
A _
1.6 + 0.05
Simplify Circuit Design.
A1
_
A
A1 1.0 + 0.05
2 5 _
C
Reduce a Quantity of Parts and Manufacturing Process. B 1.6 + 0.05
B1 _
1.2 + 0.05
D
High Packing Density. 3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
P P
P 5
EQUIVALENT CIRCUIT BIAS RESISTOR VALUES
OUT
H
TYPE NO. R1(k ) R2(k )
J
KRC857E 10 47
R1 1. Q1 COMMON (EMITTER)
IN KRC858E 22 47 2. Q1 IN (BASE)
R2 3. Q2 OUT (COLLECTOR)
KRC859E 47 22 4. Q2 COMMON (EMITTER)
5. Q2 IN (BASE)
6. Q1 OUT (COLLECTOR)
COMMON
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
Q1
Q2
1 2 3
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage KRC857E 859E VO 50 V
KRC857E 30, -6
Input Voltage KRC858E VI 40, -7 V
KRC859E 40,-15
Output Current IO 100 mA
Power Dissipation PD * 200 mW
KRC857E 859E
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Rating.
6 5 4
Marking
Lot No.
MARK SPEC
Type Name
TYPE KRC857E KRC858E KRC859E
MARK NH NI NJ
1 2 3
2008. 9. 23 Revision No : 2 1/4
KRC857E~KRC859E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current KRC857E 859E IO(OFF) VO=50V, VI=0 - - 500 nA
KRC857E 80 150 -
DC Current Gain KRC858E GI VO=5V, IO=10mA 80 150 -
KRC859E 70 140 -
Output Voltage KRC857E 859E VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V
KRC857E - 1.2 1.8
Input Voltage (ON) KRC858E VI(ON) VO=0.2V, IO=5mA - 1.8 2.6 V
KRC859E - 3.0 5.8
KRC857E 0.5 0.75 -
Input Votlage (OFF) KRC858E VI(OFF) VO=5V, IO=0.1mA 0.6 0.88 - V
KRC859E 1.5 1.82 -
Transition Frequency KRC857E 859E fT * VO=10V, IO=5mA - 200 - MHz
KRC857E - - 0.88
Input Current KRC858E II VI=5V - - 0.36 mA
KRC859E - - 0.16
KRC857E - 0.05 -
Rise
KRC858E tr - 0.12 -
Time
KRC859E - 0.26 -
KRC857E - 2.0 -
Switching Storage VO=5V, VIN=5V
KRC858E tstg - 2.4 - S
Time Time RL=1k
KRC859E - 1.5 -
KRC857E - 0.36 -
Fall
KRC858E tf - 0.4 -
Time
KRC859E - 0.41 -
Note : * Characteristic of Transistor Only.
2008. 9. 23 Revision No : 2 2/4
KRC857E~KRC859E
IO - VI(ON) IO - VI(OFF)
KRC857E KRC857E
50 3k
-25 25
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (