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PZTA96ST1G
High Voltage Transistor
PNP Silicon
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS http://onsemi.com
Compliant
COLLECTOR 2,4
MAXIMUM RATINGS BASE
1
Rating Symbol Value Unit
Collector--Emitter Voltage VCEO -- 450 Vdc
EMITTER 3
Collector--Base Voltage VCBO -- 450 Vdc
Emitter--Base Voltage VEBO -- 5.0 Vdc
MARKING
Collector Current IC -- 500 mAdc
DIAGRAM
Total Power Dissipation Up to PD 1.5 W
TA = 25C (Note 1) SOT-
-223 (TO-
-261)
Storage Temperature Range Tstg -- 65 to +150 C CASE 318E
4 STYLE 1
Junction Temperature TJ 150 C AYW
ZTA96G
1 G
THERMAL CHARACTERISTICS 2
3 1
Characteristic Symbol Max Unit
Thermal Resistance, RJA 83.3 C
Junction--to--Ambient (Note 1) A = Assembly Location
Y = Year
Stresses exceeding Maximum Ratings may damage the device. Maximum
W = Work Week
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the G = Pb--Free Package
Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
ORDERING INFORMATION
Device Package Shipping
PZTA96ST1G SOT--223 1000/Tape & Reel
(Pb--Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 3
- PZTA96ST1/D
PZTA96ST1G
ELECTRICAL CHARACTERISTICS (Note 2)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage V(BR)CEO -- 450 -- Vdc
(IC = --1.0 mAdc, IB = 0)
Collector--Emitter Breakdown Voltage V(BR)CBO -- 450 -- Vdc
(IC = --100 mAdc, IE = 0)
Emitter--Base Breakdown Voltage V(BR)EBO --5.0 -- Vdc
(IE = --10 mAdc, IC = 0)
Collector--Base Cutoff Current ICBO -- -- 0.1 mAdc
(VCB = -- 400 Vdc, IE = 0)
Emitter--Base Cutoff Current IEBO -- -- 0.1 mAdc
(VBE = -- 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 3) hFE 50 150 --
(IC = -- 10 mAdc, VCE = -- 10 Vdc)
Saturation Voltages Vdc
(IC = --20 mAdc, IB = --2.0 mAdc) VCE(sat) -- -- 0.6
(IC = --20 mAdc, IB = --2.0 mAdc) VBE(sat) -- -- 1.0
2. TA = 25C unless otherwise noted.
3. Pulse Test: Pulse Width 300 ms; Duty Cycle = 2.0%.
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2
PZTA96ST1G
PACKAGE DIMENSIONS
SOT-
-223 (TO--261)
CASE 318E--04
D ISSUE N
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4 MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e1 e 2.20 2.30 2.40 0.087 0.091 0.094
e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 ------ ------ 0.008 ------ ------
C L1 1.50 1.75 2.00 0.060 0.069 0.078
HE 6.70 7.00 7.30 0.264 0.276 0.287
A 0 -- 10 0 -- 10
0.08 (0003) STYLE 1:
A1 L PIN 1. BASE
L1 2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
2.3 2.3
0.248
0.091 0.091
2.0
0.079
1.5 SCALE 6:1 inches
mm
0.059
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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