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SEMICONDUCTOR KTX216U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES B1
Including two devices in US6.
1 6 DIM MILLIMETERS
(Ultra Super mini type with 6 leads.) A _
2.00 + 0.20
C
A1
_
A
2 5 A1 1.3 + 0.1
With Built-in bias resistors. _
C
B 2.1 + 0.1
3 4 D _
Simplify circuit design. B1 1.25 + 0.1
C 0.65
Reduce a quantity of parts and manufacturing process. D 0.2+0.10/-0.05
G 0-0.1
H _
0.9 + 0.1
H
EQUIVALENT CIRCUIT T T 0.15+0.1/-0.05
Q1 C Q2 OUT G
1. Q1 (EMITTER)
R1 Q2 2. Q1 (BASE)
B IN 3. Q2 OUT (COLLECTOR)
R1=10K 4. Q2 COMMON (EMITTER)
R2=10K 5. Q2 IN (BASE)
R2 6. Q1 (COLLECTOR)
E COMMON
EQUIVALENT CIRCUIT (TOP VIEW) US6
Marking
6 5 4 Type Name
6 5 4
Q1
Q2 BL
1 2 3 1 2 3
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
IC 500
Collector Current
ICP * 1
* Single pulse Pw=1mS.
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage VO 50 V
Input Voltage VI 30, -10 V
Output Current IO 100
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation PD * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.
2004. 2. 28 Revision No : 0 1/4
KTX216U
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IE=10 A 15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A 6 - - V
DC Current Gain hFE VCE=2V, IC=10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA - 90 250 mV
Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz - 320 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.5 - pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current IO(OFF) VO=50V, VI=0 - - 500
DC Current Gain GI VO=5V, IO=10 50 80 -
Output Voltage VO(ON) IO=10 , II=0.5 - 0.1 0.3 V
Input Voltage (ON) VI(ON) VO=0.2V, IO=5 - 1.8 2.4 V
Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1 1.0 1.2 - V
Transition Frequency fT * VO=10V, IO=5 - 200 -
Input Current II VI=5V - - 0.88
Note : * Characteristic of Transistor Only.
2004. 2. 28 Revision No : 0 2/4
KTX216U
Q1 (NPN TRANSISTOR)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
1K 1K
Ta=125 C I C /IB =20
500
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (mV)
500 Ta=25 C 300
300 Ta=-40 C
100
50
100 30 C
125
Ta= C C
50 25 0
10 Ta= Ta=-4
30 5
3
VCE =2V
10 1
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
VCE(sat) - IC VBE(sat) - IC
COLLECTOR-EMITTER SATURATION
1K 10K
BASE-EMITTER SATURATION
Ta=25 C I C /IB =20
500
5K
VOLTAGE VCE(sat) (mV)
VOLTAGE VBE(sat) (mV)
300
3K
100
50
30 1K Ta=-40 C
I C /IB =50
10 I C /I B =20 500 Ta=25 C 5 C
10 Ta=12
5 I C/I B = 300
3
1 100
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
IC - VBE fT - IC
1K
COLLECTOR CURRENT IC (mA)
TRANSITION FREQUENCY f T (MHz)
1K
VCE =2V VCE =2V
500
500 Ta=25 C
300
300
100
25 C
50
5 C
40 C
30 100
Ta=2
Ta=1
Ta=-
10 50
5 30
3
1 10
0 0.5 1.0 1.5 1 3 10 30 100 300 1K
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)
2004. 2. 28 Revision No : 0 3/4
KTX216U
Q1 (NPN TRANSISTOR)
Cob - VCB , Cib - VEB Pc - Ta
COLLECTOR LPOWER DISSIPATION P C (mW)
COLLECTOR OUTPUT CAPACITANCE Cob (PF)
COLLECTOR INPUT CAPACITANCE Cib (PF)
1K 250
I E =0A
500 f=1MHz
Ta=25 C
300 200
100 150
50
30 100
C ib
10 50
C ob
5
3 0
0 25 50 75 100 125 150
1 AMBIENT TEMPERATURE Ta ( C)
0.1 0.3 1 3 10 30 100
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)
IO - VI(ON) IO - VI(OFF)
Q2 Q2
100 10k
VO =0.2V VO =5V
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (