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Philips Semiconductors Product Specification

PowerMOS transistor BUK581-100A
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 100 V
suitable for surface mount ID Drain current (DC) 0.9 A
applications. Ptot Total power dissipation 1.5 W
The device is intended for use in Tj Junction temperature 150