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SEMICONDUCTOR KTX511T
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE
DC/DC CONVERTER APPLICATIONS.
FEATURES E
K B K
Composite type with a PNP transistor and a Schottky barrier diode
DIM MILLIMETERS
contained in one package facilitating high-density mounting. 1 6 A _
2.9 + 0.2
B 1.6+0.2/-0.1
The KTX511T consists of two chips which are equivalent to the C _
0.70 + 0.05
G
2 5 _
0.4 + 0.1
KTA1532T and the KDR701S, respectively. D
F
A
E 2.8+0.2/-0.3
Ultrasmall-sized package permiting applied sets to be made small _
G
3 4 F 1.9 + 0.2
G 0.95
D
and slim (mounting height 0.7 ). H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
EQUIVALENT CIRCUIT (TOP VIEW) K 0.60
C
L
L 0.55
6 5 4
Marking I
J
H
J
6 5 4
Lot No.
1. Q 1 EMITTER
2. Q 1 BASE
Q1 D1 3. D 1 ANODE
Type Name
DA 4. Q 1, D 1 COMMON (COLLECTOR, CATHODE)
5. Q 1, D 1 COMMON (COLLECTOR, CATHODE)
6. Q 1, D 1 COMMON (COLLECTOR, CATHODE)
1 2 3 1 2 3
TS6
MAXIMUM RATING (Ta=25 )
Transistor Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
DC IC -1.5 A
Collector Current
Pulse ICP -3 A
Base Current IB -300 mA
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
Diode (SBD) D1
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 30 V
Reverse Voltage VR 30 V
Average Forward Current IO 0.7 A
Non-Repetitive Peak Surge Current IFSM 5 A
Junction Temperature Tj 125
Storage Temperature Range Tstg -55 150
2002. 1. 24 Revision No : 1 1/5
KTX511T
ELECTRICAL CHARACTERISTICS (Ta=25 )
Transistor Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-12V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 20 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
IC=-750mA, IB=-15mA - -120 -180 mV
Collector-Emitter Saturation Voltage VCE(sat)
IC=-1.5A, IB=-30mA - -210 -320 mV
Base-Emitter Saturation Voltage VBE(sat) IC=-750mA, IB=-15mA - -0.85 -1.2 V
DC Current Gain hFE VCE=-2V, IC=-100mA 200 - 560
Transition Frequency fT VCE=-2V, IC=-300mA - 210 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz - 30 - pF
Turn-On Time ton - 50 -
Swiitching tstg
Storage Time - 90 - nS
Time
Fall Time tf - 15 -
Diode (SBD) D1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage VR IR=1mA 30 - - V
Forward Voltage VF IF=0.7A - - 0.55 V
Reverse Current IR VR=30V 80 A
Total Capacitance CT VR=0V, f=1MHz - 190 - pF
Reverse Recover Time trr IF=IR=100mA - 7.5 - ns
2002. 1. 24 Revision No : 1 2/5
KTX511T
2002. 1. 24 Revision No : 1 3/5
KTX511T
2002. 1. 24 Revision No : 1 4/5
KTX511T
2002. 1. 24 Revision No : 1 5/5