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SJV01N60
1A , 600V , RDS(ON) 10 m
Elektronische Bauelemente N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
DESCRIPTION TO-92
The high voltage MOSFET uses an advanced
A D
termination scheme to provide enhanced voltage-blocking
capability without degrading performance over time. In addition, B
this advanced MOSFET is designed to withstand high energy
in avalanche and commutation modes . The new energy
efficient design also offers a drain-to-source diode with a
E C F
fast recovery time. Designed for high voltage, high speed
switching applications in power suppliers, converters and
PWM motor controls ,these devices are particularly well
G
suited for bridge circuits where diode speed and commutating H
1 Gate
safe operating areas are critical and offer additional and safety 2 Drain
margin against unexpected voltage transients. J
3 Source
Millimeter Millimeter
FEATURES REF.
Min. Max.
REF.
Min. Max.
A 4.40 4.70 F 0.30 0.51
Robust High Voltage Termination B 4.30 4.70 G 1.27 TYP.
C 12.70 - H 1.10 1.40
Avalanche Energy Specified D 3.30 3.81 J 2.42 2.66
Source-to-Drain Diode Recovery Time E 0.36 0.56 K 0.36 0.76
Comparable to a Discrete Fast Recovery Diode
D
Diode is Characterized for Use in Bridge Circuits
2
IDSS and VDS(on) Specified at Elevated Temperature
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25