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SEMICONDUCTOR KTN2222AE
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES B
Low Leakage Current
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. D DIM MILLIMETERS
2
A _
1.60 + 0.10
G
A
Low Saturation Voltage 1 3 B _
0.85 + 0.10
H
C _
0.70 + 0.10
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
D 0.27+0.10/-0.05
Complementary to KTN2907AE. E _
1.60 + 0.10
G _
1.00 + 0.10
H 0.50
J _
0.13 + 0.05
J
C
MAXIMUM RATING (Ta=25 ) 1. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT 2. BASE
3. COLLECTOR
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA ESM
Collector Power Dissipation (Ta=25 ) PC 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
ZG
2004. 1. 29 Revision No : 0 1/4
KTN2222AE
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.01 A
Emitter Cut-off Current IEBO VEB=3V, IC=0 - - 10 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 75 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=10mA, IB=0 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6 - - V
hFE(1) IC=0.1mA, VCE=10V 35 - -
hFE(2) IC=1mA, VCE=10V 50 - -
DC Current Gain * hFE(3) IC=10mA, VCE=10V 75 - -
hFE(4) IC=150mA, VCE=10V 100 - 300
hFE(5) IC=500mA, VCE=10V 40 - -
VCE(sat)1 IC=150mA, IB=15mA - - 0.3
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=500mA, IB=50mA - - 1
VBE(sat)1 IC=150mA, IB=15mA 0.6 - 1.2
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=500mA, IB=50mA - - 2.0
VCE=20V, IC=20mA,
Transition Frequency fT 300 - - MHz
f=100MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF
Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz - - 25 pF
IC=1mA, VCE=10V, f=1kHz 2 - 8
Input Impedance hie k
IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25
IC=1mA, VCE=10V, f=1kHz - - 8
Voltage Feedback Ratio hre x10-4
IC=10mA, VCE=10V, f=1kHz - - 4
IC=1mA, VCE=10V, f=1kHz 50 - 300
Small-Singal Current Gain hfe
IC=10mA, VCE=10V, f=1kHz 75 - 375
IC=1mA, VCE=10V, f=1kHz 5 - 35
Collector Output Admittance hoe
IC=10mA, VCE=10V, f=1kHz 25 - 200
Collector-Base Time Constant Cc rbb' IE=20mA, VCB=20V, f=31.8MHz - - 150 pS
Noise Figure NF IC=100 A, VCE=10V, - - 4 dB
Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10
Rise Time tr IC=150mA, IB1=15mA - - 25
Switching Time nS
Storage Time tstg VCC=30V, IC=150mA - - 225
Fall Time tf IB1=-IB2=15mA - - 60
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2004. 1. 29 Revision No : 0 2/4
KTN2222AE
I C - V CE h FE - I C
1000 1K
COMMON EMITTER VCE =10V
COLLECTOR CURRENT I C (mA)
Ta=25 C 500
800
DC CURRENT GAIN h FE
20mA 16mA 300
18mA 14mA Ta=75 C
12mA Ta=25 C
600 10mA Ta=-25 C
8mA
6mA 100 VCE =1V
4mA VCE =2V
400
I B =2mA 50
30
200
10
0 0.4 0.8 1.2 1.6 1.8 0.5 1 3 10 30 100 300 1K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
COLLECTOR-EMITTER SATURATION
0.6 1.6
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
I C /I B =10 1.4 I C /I B =10
VOLTAGE VCE(sat) (V)
VOLTAGE VBE(sat) (V)
Ta=25 C 1.2
VBE(sat)
0.4
1.0
Ta=-25 C
0.8
Ta=25 C
0.6
0.2 Ta=75 C
0.4
VCE(sat) 0.2
0 0
0.5 1 3 10 30 100 300 1k 0.5 1 3 10 30 100 300 1k
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
I C - V BE fT - IC
500 1000
TRANSITION FREQUENCY f T (MHz)
300 COMMON EMITTER Ta=25 C
VCE =10V
VCE =10V
COLLECTOR CURRENT I C (mA)
100 300
30
Ta=75 C 100
10
C
3
25
30
Ta=
Ta=-25 C
1
0.3 10
-1 -3 -10 -30 -100 -300 -1k -3k
0.1
0.05 COLLECTOR CURRENT I C (mA)
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
BASE-EMITTER VOLTAGE VBE (V)
2004. 1. 29 Revision No : 0 3/4
KTN2222AE
Cob - V CB Pc - Ta
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
Cib - VEB
COLLECTOR INPUT CAPACITANCE Cib (pF)
100 200
COLLECTOR POWER DISSIPATION
COMMON EMITTER
f=1MHz, Ta=25 C
30 150
PC (mW)
Cib
10 100
Cob
3.0 50
1.0 0
-0.1 -1.0 -10 -100 -300 0 25 50 75 100 125 150 175
COLLECTOR-BASE VOLTAGE VCB (V) AMBIENT TEMPERATURE Ta ( C)
EMITTER-BASE VOLTAGE VEB (V)
2004. 1. 29 Revision No : 0 4/4