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BDX53BFI
BDX54BFI
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s COMPLEMENTARY PNP - NPN DEVICES

APPLICATIONS:
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT

DESCRIPTION 3
The BDX53BFI is silicon epitaxial-base NPN 2
1
power transistor in monolithic Darlington
configuration and are mounted in ISOWATT220
plastic package. It is intented for use in hammer ISOWATT220
drivers, audio amplifiers and other medium power
linear and switching applications.
The complementary PNP type is the BDX54BFI.

INTERNAL SCHEMATIC DIAGRAM

R1 Typ. = 10 K R 2 Typ. = 150

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BDX53BFI
PNP BDX54BFI
V CBO Collector-Base Voltage (IE = 0) 80 V
V CEO Collector-Emitter Voltage (I B = 0) 80 V
V EBO Emitter-base Voltage (I C = 0) 5 V
IC Collector Current 8 A
I CM Collector Peak Current (repetitive) 12 A
IB Base Current 0.2 A
P t ot Total Dissipation at T c 25 o C 30 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative.

May 1997 1/4
BDX53BFP / BDX54BFP

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 4.17 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 70 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CB = 80 V 0.2 mA
Current (IE = 0)
I CEO Collector Cut-off V CB = 40 V 0.5 mA
Current (IB = 0)
I EBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(sus ) Collector-Emitter I C = 100 mA 80 V
Sustaining Voltage
(IB = 0)
V CE(sat ) Collector-emitter IC = 3 A I B =12 mA 2 V
Saturation Voltage
V BE(s at) Base-emitter IC = 3 A I B =12 mA 2.5 V
Saturation Voltage
hFE DC Current G ain IC = 3 A V CE = 3 V 750
V F Parallel-diode Forward IF = 3 A 1.8 2.5 V
Voltage IF = 8 A 2.5 V
Pulsed: Pulse duration = 300