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MJD3055(NPN)
TO-251/TO-252-2L Transistor

TO-251

1.BASE

2.COLLECTOR

3.EMITTER
1 2 3
Features
Designed for general purpose amplifier and low speed
switching applications .
Electrically simiar to MJE3055.
DC current gain specified to10 Amperes TO-252-2L
MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 70 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 10 A
PC Collector Power Dissipation 1.25 W
Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=1mA,IE=0 70 V

Collector-emitter breakdown voltage V(BR)CEO Ic=200 mA,IB=0 60 V

Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V

ICBO VCB=70V,IE=0 0.02 mA
Collector cut-off current
ICEO VCB=30V,IB=0 50