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CEM2539
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES
D1 D2

5
20V, 7.5A, RDS(ON) = 22m @VGS = 10V.
RDS(ON) = 24m @VGS = 4.5V. *1K
G1 G2
RDS(ON) = 33m @VGS = 2.5V.
-20V, -4.0A, RDS(ON) = 80m @VGS = -10V.
RDS(ON) = 100m @VGS = -4.5V.
S1 S2
RDS(ON) = 150m @VGS = -2.5V.
D1 D1 D2 D2
Super high dense cell design for extremely low RDS(ON). 8 7 6 5

High power and current handing capability.

Lead free product is acquired.

Surface mount Package. SO-8
1
1 2 3 4
S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS