Text preview for : tip120-127.pdf part of ST tip120-127 . Electronic Components Datasheets Active components Transistors ST tip120-127.pdf
Back to : tip120-127.pdf | Home
TIP120/121/122
TIP125/126/127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The TIP120, TIP121 and TIP122 are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration Jedec TO-220
plastic package, intented for use in power linear
and switching applications.
The complementary PNP types are TIP125, 3
TIP126 and TIP127. 2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 K R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP120 TIP121 TIP122
PNP TIP125 TIP126 TIP127
V CBO Collector-Base Voltage (I E = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 5 A
I CM Collector Peak Current 8 A
IB Base Current 0.1 A
P tot Total Dissipation at T case 25 o C 65 W
T amb 25 o C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
* For PNP types voltage and current values are negative.
October 1995 1/4
TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.92 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEO Collector Cut-off for TIP120/125 V CE = 30 V 0.5 mA
Current (I B = 0) for TIP121/126 V CE = 40 V 0.5 mA
for TIP122/127 V CE = 50 V 0.5 mA
I CBO Collector Cut-off for TIP120/125 V CE = 60 V 0.2 mA
Current (I B = 0) for TIP121/126 V CE = 80 V 0.2 mA
for TIP122/127 V CE = 100 V 0.2 mA
I EBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for TIP120/125 60 V
(I B = 0) for TIP121/126 80 V
for TIP122/127 100 V
V CE(sat) * Collector-Emitter IC = 3 A I B = 12 mA 2 V
Saturation Voltage IC = 5 A I B = 20 mA 4 V
V BE(on) * Base-Emitter Voltage IC = 3 A V CE = 3 V 2.5 V
h FE * DC Current Gain I C = 0.5 A V CE = 3 V 1000
IC = 3 A V CE = 3 V 1000
* For PNP types voltage and current values are negative.
2/4
TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
TO-220 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A
D
C
D1
L2
F1
G1
H2
G
Dia.
F
F2
L5
L9
L7
L6 L4
P011C
3/4
TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.